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Space radiation is one of the most important issues to consider in the design of space systems. Electronic equipment that is used in space missions and satellite devices encounters ionizing particles, which can cause some problems in their normal operation. The damage caused by cosmic radiation to electronic equipment can be divided into three categories: total ionizing dose (TID), displacement damage (DD) and single event effect (SEE).

Some countermeasure systems must be incorporated into the design of space systems in order to address radiation damage to successfully execute a space mission. One of the most effective solutions is the design of adequate shielding to protect sensitive electronic parts.

Lightweight materials cannot efficiently attenuate the energetic electrons and protons, and heavy materials can create secondary particles. The combination of high-density shielding materials and low-density shielding materials is an ideal strategy. NASAT™ technology is based on a large sequence of HD and LD shielding nano-components. This nanotechnology based on Tungsten and Boron nano-components has been optimized through the use of software simulators and genetic algorithms. The size of the nano-components, their distribution and proportion in the epoxy suspension are characteristics of this technology for shielding gamma and neutron radiation.

Space is a very complicated environment and contains a large variety of particles with different characteristics. Actually, there is no laboratory practically to simulate such a complex environment on the Earth. Therefore computational methods are effective tools to design radiation shields. NASAT™ technology effectiveness has been evaluated with computational methods based on simulation tools (e.g. Geant4) and validated by experimental results with some limits.

The performance of NASAT™ technology has been evaluated in the context of the geometrical properties of the MIND™ device. A Genetic Algorithm has been used to process the results from simulations (fitness-function of the GA) and optimize the density of nano-components. Another GA has been used to optimize the geometrical disposition of electronic components. This optimization is obtained by minimizing the incident radiations on the surface of the silicon wafer for all the electronic devices or by maximizing the effectiveness of Tripe Modular Redundancy relatively to all the possible positions of one radiations source.

    

 

 

 

 

 

 

 

 

 

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